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 Infrared Emitting Diode(GaAlAs)
KLB-16AI-94
The KLB-16I-94 is GaAlAs infrared emitting diode and has the optimized optical characteristics.
DIMENSIONS
Features
* Ultra Wide Viewing Angle * 940nm wavelength * Low forward voltage
Applications
* Display * Indicator * Car CCD Camera
Maximum Ratings Parameter Reverse Voltage Forward current Pulse forward current Power dissipation Storage temperature Soldering Temperature *2
*2. Soldering time 5 Sec
*1
[ Ta=25C ]
Symbol VR IF IFP PD Topr. Tstg. Tsol.
Ratings 5 50 0.7 75 -20 ~ +85 -30 ~ +100 260
Unit V mA A mW C C C
Operating temperature
*1. IFP Measured under duty 1/10 @ 1KHz
Electro-Optical Characteristics Parameter Forward voltage Reverse current Radiant intensity Radiant Power Peak emission wavelength Spectral bandwidth Half angle
[ Ta=25C ]
Symbol VF IR Ie Po p
Conditions IF = 20 mA VR=5V IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA
Min 1.0 -
Typ 1.20 1.5 1.3 940 45 160
Max 1.5 10 -
Unit V A mW/sr mW nm nm deg.
1/2
Infrared Emitting Diode(GaAlAs)
KLB-16AI-94
Collector power dissipation Vs Ambient temperature
(mW)
Radiant Intensity vs. Forward current
(/sr)
Relative intensity (mW/sr)
Collector power dissipation(Po )
25 20 15 10 5 0
10 2
10 1
10 0
0
20
40
60
80
100 ()
Ambient temperature Ta
10 -1 0 10
10 1 10 2 Forward current IF
10 3
()
Relative radiant intensity vs. Ambient temperature
0.18 Relative radiant intensity PO 0.16 Intensity [arb.]
Relative intensity vs. Wavelength
10
0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 850
1
0.1
-20
0
20
40
60
80
100 ()
900
950
1000
1050
Ambient temperature Ta
Wave Length[nm]
Forward current vs. Forward voltage
() 90 80 70 60 50 40 30 20 10 5 0 (V) 0.5 1.0 1.1 1.2 1.3 1.4 1.5 Forward voltage VF
Radiant Pattern
Angle(deg)
Forward current IF
+4
+ 60
0
+2 0
0
-20
-4
0
-6 0
50
-80 -100
+ 80
+1 00
0
100
50
50
0
100
Relative intensity(%)
2/2


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